| 摘要 |
PROBLEM TO BE SOLVED: To prevent the opening diameter of a contact hole from diminishing, even when errors in alignment are caused between the contact hole and a wiring groove in a dual damascene method. SOLUTION: A first insulating film 21, with a first opening part (P) for exposing an upper face of a first wiring 30, is formed as an upper layer of the first wiring 30 on a substrate 10. A second insulating film 22 having etching selective ratio with respect to the first insulating film 21 is formed in the first opening part (P) and on the first insulating film 21. A second opening part (T), having a width smaller than that of the first opening part (P) and formed in a groove shape, in which a pair of counterposed inner wall faces both pass the upper part of the first opening part (P), and a third opening part (CH) jointed with the second opening part (T), having substantially the same width as the second opening part (T) and exposing at least the upper face of the first wiring 30 are formed in the second insulating film 22. A plug 32 is embedded in the third opening part (CH), and a second wiring 32b is embedded in the second opening (T).
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