SEMICONDUCTOR DEVICE, INTERMEDIATE PRODUCT THEREOF AND FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problems incident to the crystallinity of a single crystal silicon layer by forming a conductive film selectively on the surface of a semiconductor device such that it touches a semiconductor obtained by heat treating an amorphous film. SOLUTION: A field oxide film 2 is formed on the surface of a silicon substrate 1 and then thermally oxidized and patterned to form a silicon oxide film 5, a gate electrode 4 and a gate oxide film 3. Boron is then implanted using the silicon oxide film 5 as a mask to form a lightly doped impurity region 7 and a silicon oxide film is formed to cover the silicon substrate 1. Subsequently, ion implantation and heat treatment are carried to form an amorphous silicon layer selectively on the silicon substrate 1 and then BF2 is injected to form a silicon oxide film 9 and a silicon layer 10 is formed by heat treating the amorphous silicon layer. Since a facet is not formed in the amorphous silicon layer and the silicon substrate is not implanted with an impurity, leakage current can be reduced.