发明名称 |
Stress induced voltage fluctuation for measuring stress and strain in materials |
摘要 |
The present invention is a novel electronic technique that detects stress/strain in any conductive or semiconductive material. The technique is based on passing a current through the material of interest and analyzing the low frequency voltage fluctuation. The voltage fluctuation is very sensitive to the amount of stress present in the sample. The voltage fluctuation is a result of interactions between the imposed current and material itself. The technique is many orders of magnitude more sensitive than any present method. The technique is suitable for sensitive measurements without a strain gauge. The technique is not limited by sample size, and provides a simple, fast, nondestructive and on-site evaluation of stress/strain in a material.
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申请公布号 |
US6134971(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19980141365 |
申请日期 |
1998.08.27 |
申请人 |
UNIVERSITY OF HAWAII |
发明人 |
MISRA, ANUPAM;GAINES, JAMES R.;ROCHELEAU, RICHARD;SONG, STEVEN |
分类号 |
G01B7/16;G01L5/00;(IPC1-7):G01B7/16 |
主分类号 |
G01B7/16 |
代理机构 |
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地址 |
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