发明名称 |
Method and apparatus for improving accuracy of plasma etching process |
摘要 |
The invention provides a process and apparatus for improving the accuracy of plasma etching processes such as trench and recess etch processes. In such processes, a trench or recess is etched into a layer of material which does not have a stop layer at the desired depth of the etched openings. Instead, the etching process is carried out for a set time period calculated to achieve a desired etch depth on the basis of measured or estimated etching rates. For example, the duration of etching to achieve a target depth may be based on statistical analysis or real-time measurements of etch depths by interferometry. However, use of estimated etching rates or interferometry to control when etching should be terminated to achieve a desired etch depth can result in defective structures due to etched openings which are too deep or too shallow. According to the invention, a technique is provided for controlling the etching process in a manner which achieves more accurate etch depths in a more reproducible way by conducting a masking layer thickness measurement as part of the etching process.
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申请公布号 |
US6136712(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19980163303 |
申请日期 |
1998.09.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KLIPPERT II, WALTER E;KADAVANICH, VIKORN MARTIN |
分类号 |
G01B11/02;B01J19/08;B81C1/00;G01B11/06;G01B11/22;H01L21/302;H01L21/306;H01L21/3065;H01L33/00;H05H1/00;H05H1/46;(IPC1-7):H01L33/00 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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