| 摘要 |
PROBLEM TO BE SOLVED: To improve effects for preventing the generation of noises due to crosstalks in a semiconductor package during high-speed operation of LSIs. SOLUTION: A first conductive layer 1 is at a ground potential, second conductive layers 3a and 3b are at a power supply potential or at a signal potential, and an insulation material 2 is pinched vertically by the first conductive layer 1 are the second conductive layers 3a and 3b, forming a capacitive structure between the first conductive layer 1 and the second conductive layers 3a and 3b. Electromagnetic waves (crosstalks) generated in the second conductive layers 3a and 3b being at a power supply potential or at a signal potential is induced forcedly on the side of the first conductive layer 1 which is at a ground potential through the capacity structure. Therefore, the crosstalk is not conveyed between the second conductive layers 3a and 3b but is induced to the side of the first conductive layer 1 being at a ground potential and is absorbed thereby, so that noises can be prevented as much as possible from being generated in the second conductive layers 3a and 3b.
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