发明名称 Method for manufacturing a semiconductor wafer using a threadless corrosion-preventing gas ring
摘要 A method for manufacturing a semiconductor wafer begins by placing the wafer into a process chamber (74). A metal etch gas is then provided through a gas fitting (52) having an outlet tube (52b). The outlet tube (52b) is threadless and is made of a material which will not substantially corrode in the presence of the corrosive etch gas. In addition, the outlet tube (52b) contains gas distribution openings (84) which improve gas distribution within a gas channel (54b) of a gas ring (54). The elimination of the threading in the gas feed inlet (54a) of the gas ring (54) will allow a sidewall of the inlet (54a) to be anodized for greater corrosion protection. The reduction in corrosion will improve wafer yield, reduce manufacturing costs, and reduce equipment down time.
申请公布号 US6136718(A) 申请公布日期 2000.10.24
申请号 US19980113403 申请日期 1998.07.10
申请人 MOTOROLA, INC. 发明人 PRATHER, MICHAEL K.;MUTO, ROSARIO LOUIS
分类号 H01L21/00;(IPC1-7):H01L21/302 主分类号 H01L21/00
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