发明名称 |
Method for manufacturing a semiconductor wafer using a threadless corrosion-preventing gas ring |
摘要 |
A method for manufacturing a semiconductor wafer begins by placing the wafer into a process chamber (74). A metal etch gas is then provided through a gas fitting (52) having an outlet tube (52b). The outlet tube (52b) is threadless and is made of a material which will not substantially corrode in the presence of the corrosive etch gas. In addition, the outlet tube (52b) contains gas distribution openings (84) which improve gas distribution within a gas channel (54b) of a gas ring (54). The elimination of the threading in the gas feed inlet (54a) of the gas ring (54) will allow a sidewall of the inlet (54a) to be anodized for greater corrosion protection. The reduction in corrosion will improve wafer yield, reduce manufacturing costs, and reduce equipment down time.
|
申请公布号 |
US6136718(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19980113403 |
申请日期 |
1998.07.10 |
申请人 |
MOTOROLA, INC. |
发明人 |
PRATHER, MICHAEL K.;MUTO, ROSARIO LOUIS |
分类号 |
H01L21/00;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|