发明名称 Memory device with reduced power consumption
摘要 A memory device, such as a SDRAM, has an active mode and a standby mode. A memory core is controlled in the active state and the standby state. First and second latch circuits respectively latch a data signal and a command signal, when clocked. In the active state, a buffer circuit connected to the first latch circuit, latches the latched data signal, and generates a buffered data signal. A register is connected to the buffer and receives and stores the buffered data signal. A decision circuit, connected between the second latch circuit and the buffer circuit, decodes the latched command signal and selectively activates the buffer circuit based on the decoded command. In the standby mode, the latched data signal is not provided to the buffer circuit. Power may also not be provided to the buffer circuit in the standby mode.
申请公布号 US6137744(A) 申请公布日期 2000.10.24
申请号 US19990459650 申请日期 1999.12.13
申请人 FUJITSU LIMITED 发明人 WATANABE, JUN
分类号 G11C11/413;G11C7/10;G11C7/22;G11C11/407;G11C11/4074;G11C16/06;(IPC1-7):G11C7/00 主分类号 G11C11/413
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