发明名称 |
Method for producing a silicon single crystal |
摘要 |
A method of producing a single crystal by Czochralski method by contacting a seed crystal with a melt in a crucible, and then pulling it slowly to grow a single crystal ingot, wherein a pulling condition is controlled according to a cumulative time of use of a heater surrounding the crucible. The pulling conditions to be controlled may induce the relative position of the heater and the crucible, the number of rotations of the crucible, the number of rotations of the crystal, or an atmosphere pressure in the furnace and a gas volume of flowing. Also described is a method of producing a silicon single crystal by CZ method wherein a dispersion of impurity concentration in the crystal can be reduced, and a single crystal can be produced stably.
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申请公布号 |
US6136090(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19990249410 |
申请日期 |
1999.02.12 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
ARAKI, KENJI;OKAMOTO, HIDEO;UESUGI, TOSHIHARU;IWASAKI, ATSUSHI |
分类号 |
C30B15/20;C30B15/00;C30B15/14;C30B29/06;(IPC1-7):C30B15/18 |
主分类号 |
C30B15/20 |
代理机构 |
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地址 |
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