| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively obtain an adhesive for producing highly reliable high density semiconductor devices, excellent in adhesiveness, preservability, stability and workability, capable of relaxing thermal stress generated during the assembling of the semiconductor devices using the same. SOLUTION: This adhesive 26 for high density semiconductors has characteristics excellent in adhesiveness, preservability and workability by making the adhesive contain suitable amounts of three kinds of silica, i.e., spherical and granular silica having hydroxide groups on its surface, spherical and fine-grain silica, and ultrafine silica as solid adhesive component and viscosity-adjusting component. The three kinds of silica are spherical and granular silica having 2-8 μm average diameter and hydroxyl groups on the surface, spherical fine-grain silica having 0.2-0.8 μm average diameter, and ultrafine silica having 2-80 nm average diameter. The sum content of the three kinds of silica is 5-70 wt.% and the content of the spherical and granular silica is higher than the contents of spherical fine-grain silica and the ultrafine silica. |
