| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a simplified wiring pattern and in which recesses can be formed in a short time by performing etching via etching holes. SOLUTION: A dielectric thin film 12 is formed on the upper surface of a silicon substrate 10, in such a way that the film 12 covers recesses formed on the upper surface of the substrate 10. Then a circuit pattern containing thermoelectric conversion elements 8 is formed on the thin film 12. The upper surface of the substrate 10 becomes the (100)-plane, and first etching holes 16 extended in the <100>-direction of the substrate 10 and second etching holes extending in the <-100>-direction of the substrate 10 are formed through the thin film 12, in a state where the rows of the holes intersect each other in the form of a cross. The first and second etching holes have parallelogram shapes and oblique sides, which are inclined with respect to the <100> and <-100> directions and virtual rectangles passing through the tops of the first and second etching holes are formed continuously. Since the (411)-plane of the substrate 10 appears when the silicon substrate 10 is removed in the cross, the substrate 10 can be etched at the highest rate. |
