| 摘要 |
There is provided a semiconductor device including (a) a semiconductor substrate, (b) a gate insulating film formed on the semiconductor substrate, (c) a gate electrode formed on the gate insulating film, (d) L-shaped insulating films each comprising a first portion vertically extending on a sidewall of the gate electrode, and a second portion horizontally extending on the semiconductor substrate, and (e) raised source and drain layers formed on the semiconductor substrate in selected areas so that the raised source and drain layers make contact only with an end surface of the second portion. In the semiconductor device, since the insulating films are formed L-shaped, it is possible to reduce an area at which the insulating films make contact with the raised source and drain layers when the raised source and drain layers are formed by selective epitaxial growth. This prevents formation of facets, resulting in improving fabrication yield of a semiconductor device.
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