发明名称 Method of dicing semiconductor wafer
摘要 A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.
申请公布号 US6136668(A) 申请公布日期 2000.10.24
申请号 US19980169928 申请日期 1998.10.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAMAKI, MASAHIRO;HAYASHI, KAZUO;TAKENO, SHOZUI
分类号 H01L21/301;H01L21/304;H01L23/58;(IPC1-7):H01L21/304 主分类号 H01L21/301
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