Semiconductor processing methods of forming contacts between electrically conductive materials

摘要

In one aspect, the invention includes a semiconductor processing method of forming a contact between two electrically conductive materials comprising: a) forming a first conductive material over a substrate, the first conductive material being capable of being oxidized in the presence of oxygen to an insulating material; b) sputter cleaning the first conductive material in the presence of oxygen in a gaseous phase and in the presence of an oxygen gettering agent; and c) forming a second conductive material in electrical contact with the first conductive material. In another aspect, the invention includes a semiconductor processing method of forming a contact between two metal layers comprising: a) forming a first metal layer over a substrate; b) forming an oxygen containing material over the substrate proximate the first metal layer and covering at least a portion of the first metal layer; c) forming an opening through the oxygen containing material to the first metal layer; e) after forming the opening and with the substrate in a processing chamber, sputter cleaning the first metal layer and liberating oxygen from the oxygen containing material; f) while sputter cleaning, gettering the liberated oxygen within the processing chamber; and g) forming a second metal layer within the opening and in electrical contact with the first metal layer.