| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor light emitting element having an electrode where satisfactory ohmic contact is given, diffusion of Ga and the like to an electrode surface is prevented and wire bonding property is improved, while conducting surface roughing for forming projecting and recessed parts at the periphery of a light emitting element chip. SOLUTION: A semiconductor layer part 4 where the light emitting layers of an n-type layer 2 and a p-type layers 3, which are formed of GaP, are formed is grown sequentially and epitaxially. A p-side electrode 6 is partially formed on the surface of the semiconductor stack part 4, so that it is installed on a part of the surface area of respective chips and an n-side electrode 7 is formed at the back of a semiconductor substrate 1. A wafer is diced and is made into chips and the exposed surface of the semiconductor stack part 4 of the chip is roughened by hydrochloric acid. The p-side electrode 6 is formed by the three-layer structure of a contact metal layer 6a, which makes ohmic-contact with the GaP layer 3, an Mo layer 6b and a Au layer 6c. Then, surface roughening is executed by hydrochloric acid. |
