发明名称 STRUCTURE FOR SEMICONDUCTOR PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To obtain a pressure sensor which is of high reliability and which is not influenced by a pressure medium by a method wherein a conductive thin film which is corrosion-resistant to a corrosive liquid or gas used as the pressure medium and which is composed of an Au material or an Au alloy material is formed on the pressure receiving face of a diaphragm and on a slope generated on the side face of a recessed part. SOLUTION: A corrosion-resistant conductive thin film 20 is formed uniformly on the side of the pressure receiving face 7a of a diaphragm 7 in a semiconductor pressure sensor chip 1. The semiconductor pressure sensor chip 1 and a glass pedestal 2 are bonded by an anodic bonding operation via the conductive thin film 20. As acoustic bonding conditions at this time, the side of the semiconductor pressure sensor chip 1 is used as a positive electrode, the side of the glass pedestal 2 is used as a negative electrode, and a DC voltage of about 600 to 700 V is applied, e.g. at a temperature of 400 deg.C and in a vacuum. As a material for the conductive thin film 20, an Au material or an Au alloy material is used. The Au material or the Au alloy material can be bonded directly to the glass pedestal 2. The conductive thin film 20 which is constituted in this manner can be formed in a thickness of about provided with sufficient durability to 5000Åby a sputtering operation, and its bonding strength can be ensured.
申请公布号 JP2000298071(A) 申请公布日期 2000.10.24
申请号 JP19990108613 申请日期 1999.04.15
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SAITO HIROSHI;AKAI SUMIO
分类号 G01L9/04;G01L9/00;G01L19/06;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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