| 摘要 |
A non-volatile semiconductor reference voltage source has a memory unit capable of storing information about a history of an associated circuit. The memory unit is located in proximity to the memory unit and contains at least some similar elements as the memory unit. The history may include information about at least some of the following: states of stored information, construction variations of the elements of the associated circuit, environmental considerations, deterioration and fatigue of the elements, and decay of information in the associated circuit. The memory unit is connected to modify an output of the reference voltage source in accordance with the stored information. A method is also presented for generating a reference voltage within an integrated memory circuit. The method includes providing a column of said memory units, each memory unit having a unique row line set associated with it. A low-side line of said additional column is isolated from substantial current sources or current sinks, and the low-side line of said additional column is charged to said reference voltage. The voltage on said low-side line of said additional column is provided to an output node when said charging is substantially complete.
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