Semiconductor memory device with reduced consumption of standby current in refresh mode

摘要

Disclosed is a semiconductor memory device with a reduced consumption of standby current in a self-refresh mode. The semiconductor memory device includes a DC voltage source control circuit unit for controlling a DC voltage generating unit. The DC voltage source control unit periodically turns on and off the DC voltage generating unit in such a fashion that voltages sources used for a self-refresh operation are maintained their OFF states during standby in a self-refresh mode.