| 摘要 |
PROBLEM TO BE SOLVED: To realize phase variation record with super-high density without using a mechanical system by using difference of resistance values of a crystalline phase and an amorphous phase in phase variation materials for storage principle of information. SOLUTION: A memory unit (cell) of information is a recording element having such plural structure that a storage member 2 using phase variation materials is held between a first electrode 1 and a second electrode 3. When this storage member 2 is a crystalline phase, a current I made to flow between the first and the second electrodes is easy to flow. On the other hand, when the storage member 2 is an amorphous phase, a current I made to flow between the first and the second electrodes is hard to flow. Then, when read-out voltage is assumed as Vr, current I2, and I2 can be measured. As resistance values of a crystalline phase and an amorphous phase of the storage member 2 are different by about two figures, values of current are different by almost two figures. By using this characteristic, it can be read out that information is '1' or '0'. |
