PRODUCTION OF SILICON CARBIDE FILM, PRODUCING DEVICE THEREFOR AND PRODUCTION OF X-RAY MASK

摘要

PROBLEM TO BE SOLVED: To solve the unuiformity of stress or film thickness caused by the partial shortage of acetylene in a CVD device in the production of silicon carbide films. SOLUTION: In the method for producing silicon carbide films in which silicon carbide films are formed on substrates by chemical vapor phase reaction using at least dichlorsilane (SiH2Cl2) and acetylene (C2H2) as gaseous starting materials by using a CVD device capable of simultaneously producing silicon carbide (SiC) films on plural substrates, while gaseous acetylene is suppletorily fed to the places poor in gaseous acetylene in a reaction tube of the CVD device, e.g. by feed tubes 13 and 14, silicon carbide films are formed.