| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability even under high-output oscillation by composing a second substrate and a conductive substrate by InGaN and making specific the amount of distortion for the conductive substrate for a clad layer, and forming the clad layer by InGaAlN. SOLUTION: The semiconductor light-emitting device is formed by laminating a second substrate formed by selective growth, a conductive substrate with one of a pair of electrodes, a lower clad layer 7, a lower optical waveguide layer 8, an upper optical waveguide layer 10, an upper clad layer 11, a quantum well active layer 9, a contact layer 12, and the other electrode on a first substrate 1 in this order. In this case, the second substrate and the conductive substrate are formed by an InGaN-family material, the clad layer is in a composition where the amount of distortion for the conductive substrate is within±0.01 and is formed by an InGaAlN-family material. The clad layer may be in ultra-lattice structure and the amount of distortion of itself is preferably in a composition within±0.01.
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