发明名称 |
Static random access memory with rewriting circuit |
摘要 |
A static random access memory for improving the cell stability during read/write operation is provided. The SRAM comprises: a bit line and an inverted bit line; a memory cell coupled between the bit line and the inverted bit line for storing data; and a re-writing circuit coupled between the bit line and the inverted bit line for re-writing the data stored in the memory cell to the memory cell, in response to, at least, one read/write control signal for controlling read/write operation of the memory cell. The SRAM of this invention can be stably operated under low power voltage and/or at low temperature.
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申请公布号 |
US6137715(A) |
申请公布日期 |
2000.10.24 |
申请号 |
US19990328439 |
申请日期 |
1999.06.09 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHO, YONG CHUL |
分类号 |
G11C11/419;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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