| 发明名称 |
Manganese oxide material having MnO3 as a matrix |
| 摘要 |
A manganese oxide material that can be used as a switching device or as a memory device or the like is formed of Mn-based oxide material. The Mn-based oxide material exhibits insulator-to-metal transitions induced by irradiating the material with laser light. |
| 申请公布号 |
US6136457(A) |
申请公布日期 |
2000.10.24 |
| 申请号 |
US19980039251 |
申请日期 |
1998.03.16 |
| 申请人 |
AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY MINISTRY OF INTERNATIONAL TRADE AND INDUSTRY;ANGSTROM TECHNOLOGY PARTNERSHIP |
发明人 |
MIYANO, KENJIRO;TANAKA, TAKEHITO;TOKURA, YOSHINORI;TOMIOKA, YASUHIDE |
| 分类号 |
C01G45/00;C04B35/01;C30B29/22;G11C13/00;(IPC1-7):B32B19/00;H01H35/00;H01H47/24;G11C13/04 |
主分类号 |
C01G45/00 |
| 代理机构 |
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