Method for depositing metal

摘要

A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200 DEG C. Then the wafer is placed in an ambient of approximately 350 DEG C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an antireflective coating to prevent rainbowing or spiking of the coating into the underlying metal.