发明名称 TEMPERATURE LEVEL DETECTION CIRCUIT
摘要 The invention concerns a temperature level detection circuit including means (B1, B2, B3, 11, 12, 21, 31, 32) for generating diode voltages (V BE1 to V BE5) and calculating means including capacitive elements (51, 52, 53) and switching means (SW1 to SW4) arranged to connect selectively and sequentially, during first and second phases, the capacitive elements (51, 52, 53) to the means generating said diode voltages (VBE1 to VBE5). During the second phase, the calculating means generating a temperature signal representative of the temperature level being greater than or less than a determined temperature threshold (T limit) defined as the temperature value for which the equation .alpha.1 (V BE2 - V BE1) + .alpha.2 (V BE3 + .alpha.3s (V BE5 - V BE4)) becomes zero, where .alpha.1, .alpha.2, and .alpha.3 are first, second and third proportionality coefficients determined by the values of the capacitive elements.
申请公布号 CA2305885(A1) 申请公布日期 2000.10.21
申请号 CA20002305885 申请日期 2000.04.17
申请人 EM MICROELECTRONIC-MARIN SA 发明人 DESCOMBES, ARTHUR
分类号 G01K3/00;G01K7/01;(IPC1-7):G05B1/02;G01K1/12;G01K7/42;H02H7/18 主分类号 G01K3/00
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