MANUFACTURE OF SEMICONDUCTOR SUBSTRATE HAVING CRYSTALLINE ALKALINE EARTH METALLIC OXIDE INTERFACE HAVING SILICON

摘要

PROBLEM TO BE SOLVED: To provide the manufacture of a thin stable crystalline interface to silicon. SOLUTION: This method is for manufacturing of a semiconductor substrate by preparing a silicon substrate 10 having a surface, and forming interface 14 consisting of silicon, oxygen, and a metal on the surface of the silicon substrate, and forming one or more single crystalline oxide layer on the interface 14. This interface consists of the atomic layer of silicon oxygen, and a metal expressed by the formula XSiO2, where X represents a metal.