发明名称 THIN FILM GAS SENSOR
摘要 PROBLEM TO BE SOLVED: To reduce power consumption, and simultaneously to aim shortening of a response time and secureness of gas sensitivity. SOLUTION: This sensor is so composed that a heater layer 1 is formed on a substrate surface formed by hollowing out a one-side surface center part of a Si substrate into a diaphragm shape, through a support layer, and that an electrode (sensing film electrode 4) is formed thereon through an electrical insulating layer, and that a gas sensing film 5 is formed thereon furthermore. In this case, a response time can be reduced within a prescribed time, by forming a heat generating part including the gas sensing film 5 in a size within a circle having a radius of 100μm. And, power consumption can be reduced within a prescribed value, by forming the gas sensing film 5 in a size within a circle having a diameter of a half of the diaphragm diameter.
申请公布号 JP2000292394(A) 申请公布日期 2000.10.20
申请号 JP19990096270 申请日期 1999.04.02
申请人 FUJI ELECTRIC CO LTD 发明人 SUZUKI TAKUYA;ONODERA KATSUMI;INOUE FUMIHIRO;TSUDA KOICHI
分类号 G01N27/12;G08B21/00;G08B21/16;(IPC1-7):G01N27/12 主分类号 G01N27/12
代理机构 代理人
主权项
地址