发明名称 SEMICONDUCTOR DEVICE SIMULATOR
摘要 PROBLEM TO BE SOLVED: To determine whether the results of calculations based on Newton method at a given terminal voltage converge or not before solving equations describing the states of electron density, hole density and potential using the Newton method and thus allow appropriate adjustments to be made, by solving the problem that whether the results of calculation will converge or not cannot be determined before these calculations and thus a great number of trial calculations must be performed before their convergence in performing semiconductor device simulations. SOLUTION: Before calculating equations respectively describing the states of electron density, hole density and potential, only an equation describing the state of potential is calculated to evaluate rounding errors as to the potential. Then, it is determined whether calculations of the electron density and hole density based on Newton method converge or not at a given terminal voltage. In this case, the time required to calculate only the equation describing the state of potential is remarkably shorter than that required to calculate the equations describing the states of electron density and hole density. Therefore, the simulator can remarkably reduce the loss of time which will have to be sacrificed if the calculations of the equations describing the states of electron density, hole density and potential do not converge.
申请公布号 JP2000294762(A) 申请公布日期 2000.10.20
申请号 JP19990100304 申请日期 1999.04.07
申请人 TOSHIBA CORP 发明人 YOSHIDA YUICHIRO
分类号 H01L29/00;(IPC1-7):H01L29/00 主分类号 H01L29/00
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