| 摘要 |
PROBLEM TO BE SOLVED: To etch and further ash without imparting damages to a substrate by a method wherein a reaction gas is brought into contact with a heated catalyzer, and the substrate or a film on the substrate is etched or ashed by the resultantly generated reaction species or precursor. SOLUTION: A reaction gas such as a CF4 gas, or the like is brought into contact with a heated catalyzer, and sufficient kinetic energy is imparted to the resultantly generated reaction species or the precursor, and a film such as polycrystalline silicon, or the like is etched in a vapor phase on a substrate. A reaction gas 40 such as CF4, or the like is passed through a supply port 43 of a shower head 42 from a supply pipe 41 together with a diluted or carrier gas such as Ar, or the like as occasion demands, and is led into a vapor phase etching chamber 44. In the interior of the chamber 44, there are respectively arranged a susceptor 45 for supporting a substrate 1 having a thin film 56 such as a polycrystalline silicon layer, or the like to be etched; and the shower head 42 with superior heat-resistance; a catalyzer 46; and a shutter 47 which can be opened and closed.
|
