| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of particles from a buried insulation layer by a method wherein thermal energy is given to a discrimination pattern forming region on a substrate surface to form a discrimination pattern, and a layer composed of a substance having a different coefficient of thermal expansion from the substrate is formed within the substrate. SOLUTION: Laser beams are radiated on a discrimination pattern forming region B on the surface of a silicon semiconductor substrate 101 to form a predetermined discrimination pattern 102. Next, oxygen ions are injected over the entire face by an ion injection method, and a silicon oxide layer 103 is formed within a substrate 101. At this time, in a part where the discrimination pattern 102 is formed, the oxygen ions are injected more deeply or shallowly than the other parts in response to the surface shape of the discrimination pattern 102. A does and acceleration energy of the oxygen ions are accurately controlled, and an SOI layer 104 and the silicon oxide layer 103 having uniform film quality and every few variations of a film thickness are formed. Next, the substrate is heated.
|
