| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance of the constituent films of a stacked gate electrode. SOLUTION: A semiconductor substrate, which is equipped with a stacked gate electrode 6 where a semiconductor film layer 3, a barrier layer 4 consisting of a high melting point metal of oxide, and a high melting metal 5 are stacked in the order, is heat-treated in the range of 5%-20% in steam partial pressure and 650 deg.C-850 deg.C in heat treatment temperature under a mixed atmosphere between steam and hydrogen. Hereby, between a semiconductor film layer and a barrier layer, only the oxide film existing in the section above the semiconductor layer can be reduced selectively on one hand, and at the section 7 where a thin gate oxide film on the semiconductor substrate is exposed, and it can be oxidated selectively on the other. A semiconductor -oxygen coupling layer 8. 5% or under in oxygen content is made between the semiconductor layer and the barrier film, and a contact resistance of 5×10-6Ωcm2 or smaller at the gate electrode part can be realized.
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