| 摘要 |
PROBLEM TO BE SOLVED: To reduce the leakage current of a capacitor with a capacitance insulating film consisting of a ceramic thin film with perovskite structure, and to enhance a breakdown voltage. SOLUTION: On a foundation insulating film 12 being formed on a semiconductor substrate 11, a ferro-electric capacitor is formed, where the ferro-electric capacitor is composed of a lower electrode 13A, a ceramic capacitance film 14A consisting of a ferroelectric, and an upper electrode 15A. An interlayer insulation 16 is formed on the semiconductor substrate 11 so that the ferro- electric capacitor is covered, and electrode wiring 17 is formed on the interlayer insulation 16. A relationship of L>=2D is established between length L of the surface of the ceramic capacitance film 14A existing between the intersection of the side surface of the upper electrode 15A and the upper surface of the ceramic capacitance film 14A and the intersection of the side surface of the ceramic capacitance film 14A and the upper surface of the lower electrode 13A, and thickness D of the ceramic capacitance film 14A. |
