| 摘要 |
PROBLEM TO BE SOLVED: To simplify the structure of a nonvolatile semiconductor memory to be injected with charge from a gate electrode and the manufacture method, and raise the yield, by forming the oxide of gate electrode material on the surface of the gate electrode of a memory transistor, and adding compressive stress to the interface between a channel region and a gate insulating film. SOLUTION: A nonvolatile semiconductor memory element includes a semiconductor consisting of a channel region and source and drain regions containing impurities to serve as a donor or an acceptor, and a transistor having at least a gate insulating film 4, a gate electrode 5, and source and drain electrodes 10 and 11. This is a nonvolatile semiconductor memory element which works as a memory by injecting the gate insulating film 4 with charge from the semiconductor layer or the gate electrode 5. Moreover, it is put in such a condition that carrier is easy to be injected into the gate insulating film by adding compressive stress to the interface between the channel region and the gate insulating film, by forming the oxide of the gate electrode material on the surface of the gate electrode 5 of the transistor.
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