发明名称 THERMAL INFRARED RAY IMAGE PICKUP ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a thermal infrared ray image pickup element that easily and quickly corrects the sensitivity between pixels with high accuracy. SOLUTION: A heating means 41 and a temperature detection means 40 heat up a semiconductor substrate 11 to a prescribed temperature, a voltage is applied between an electrode 30 provided to a diaphragm section 14 with an infrared ray detection section (resistor 16) mounted thereon and the semiconductor substrate 11, an electrostatic force allows the diaphragm section 14 to be in contact with the semiconductor substrate 11 to make the temperature of all pixels of the infrared ray detection section the same as that of the semiconductor substrate 11, an output voltage of each pixel is stored in this case, and the sensitivity of each pixel is corrected according to the output voltage in this thermal infrared ray image pickup element. Since an object at a uniformized temperature is not required different from a conventional image pickup element, the procedure required for sensitivity correction is very easy and quickened, and since the temperature of the pixels can be made the same accurately, the sensitivity can be corrected with high precision.
申请公布号 JP2000295528(A) 申请公布日期 2000.10.20
申请号 JP19990096645 申请日期 1999.04.02
申请人 NISSAN MOTOR CO LTD 发明人 MORITA SHINICHI;IWASAKI YASUKAZU
分类号 H04N5/32;G01J1/00;G01J1/42;G01J5/48;H01L27/14;H01L27/144;H04N5/33;H04N5/335;H04N5/365;H04N5/369;(IPC1-7):H04N5/32 主分类号 H04N5/32
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