发明名称 SEMICONDUCTOR ELECTRON EMITTING COLD CATHODE ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To generate an avalanche breakdown phenomenon without a pn junction, and to generate hot electrons without losing energy and to efficiently emit electrons from a semiconductor to the outside (vacuum). SOLUTION: This electron emitting cold cathode element 1 of an integrated structure is formed by disposing a semiconductor 2A between a first electrode 3 and a second electrode 4. A collector electrode 6 is disposed opposed to the electron emitting cold cathode element 1. A voltage applying power source 8 is serially connected to a collector power source 7 that a plus side thereof is connected to the collector electrode 6. The second electrode 4 is connected to the plus side of the voltage applying power source 8 and the first electrode 3 is connected to the minus side.</p>
申请公布号 JP2000294116(A) 申请公布日期 2000.10.20
申请号 JP19990133101 申请日期 1999.04.06
申请人 AWAJI TAKESHI 发明人 AWAJI TAKESHI
分类号 H01J1/308;(IPC1-7):H01J1/308 主分类号 H01J1/308
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