| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by which the formation of an insulation film, in which a material gas for forming a plug layer passes through a wiring layer and results in failure of electric connection, can be prevented when the plug layer is formed by burying a connection hole with a conductive body. SOLUTION: A first wiring layer 16 is formed of a laminated structure comprising an Al-0.5% Cu lower wiring film 12 and a Ti/TiN upper wiring layer 14, and a second interlayer insulation film 24 in which a polyarylether film 20 and a silicon oxide layer 22 are piled up in order is formed over the first wiring layer 16. A via hole 26 made in the second interlayer insulation film 24 is filled with a W plug layer 32a with a Ti/TiN/W barrier metal film 30 interposed. Then, a TiNX(x 1) barrier thin film 28 is formed between a TiN film above the Ti/TiN upper wiring film 14 and the Ti/TiN/W barrier metal film 30.
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