| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting apparatus in which channeling distribution is uniform in a surface and uniform doping is enabled, and an ion implanting method. SOLUTION: Energy is applied to impurities, with which a semiconductor wafer 9 is to be doped by using an ion source in a vacuum vessel, and the impurities are ionized. The ions are carried in a mass separator in the vacuum vessel by electrostatic force, and ions having desired mass are extracted. The ions are accelerated under a high electric field with an accelerator, arranged outside the vacuum vessel and converged in a desired beam diameter with a beam focusing device 4. This ion beam is irradiated on the surface of the semiconductor wafer 9 retained by a retaining member 10, while scanning the wafer in the Y-axis and X-axis directions with a Y-scanner and an X-scanner. The retaining member 10 is continuously or intermittently driven within a prescribed angle range during the ion implantation in the semiconductor wafer 9.
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