| 摘要 |
PROBLEM TO BE SOLVED: To prevent an over-etching due to the exposure of a low dielectric constant film in a contact hole by providing a second etching preventive film to a first etching preventive film and then forming a second interlayer insulation film on the surface of the second etching preventive film. SOLUTION: A lower insulation layer 2 is formed on the surface of a substrate 1 and a first low dielectric constant film 3 is formed on such lower insulation film 2. A first etching preventive film 4 is formed on the surface of the low dielectric constant film 3 and a plurality of first layer metal wirings 5 are formed, within the first low dielectric constant film 3 and first etching preventive film 4, with an interval in the horizontal direction, under the condition that these wirings are in contact with the surface of lower insulation layer 2 and exposed at the surface of the first etching preventive film 4. On the surface of the first layer metal wiring 5 and first etching preventive film 4, the second etching preventive film 6 is formed and the second low dielectric constant film 7 is formed as the interlayer insulation film on the surface of the second etching preventive film 6.
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