| 摘要 |
PROBLEM TO BE SOLVED: To obtain single transversal mode with favorable far field patterns with favorable yields even in high power type by forming a first insulating film having striped openings on a first p-type nitride semiconductor layer and forming a ridge out of a second p-type nitride semiconductor formed by the openings. SOLUTION: A sapphire substrate 1 is set in a reaction vessel and a first nitride semiconductor layer of undoped GaN is formed as a base layer. A striped photomask is formed on the surface of the semiconductor layer and a first insulating film 30 is formed with a CVD system. The photomask is formed so that the strips are perpendicular to the orientation flat face. After formation of striped GaN, the wafer is transferred to the reaction vessel and a second nitride semiconductor layer composed of undoped GaN is grown using material gas. When the second p-type nitride semiconductor layer is grown after the formation of the first insulating film 30, the nitride semiconductor is locally grown upward from the opening in the insulating film. Therefore, the nitride semiconductor is formed into ridge shape without etching.
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