| 摘要 |
PROBLEM TO BE SOLVED: To obtain a new insulated gate field effect transistor which eliminates existence of limit in high frequency characteristic of an insulated gate FET which limit is to be caused by phenomena, that gate impedance as the insulated gate FET containing a connecting path between a control voltage source and a gate electrode, resistance of the gate electrode, etc., becomes a certain value which cannot be ignored. SOLUTION: In a partial region on a single crystal semiconductor layer, a gate electrode 7 and a gate insulating film 8 are longer as compared with the respective lengths in other regions. In the partial region, the gate insulating film 8 is thicker as compared with the thickness in other regions. On an interlayer insulating film, a conducting layer for leading out the gate electrode which layer has lower resistance as compared with that of the gate electrode 7 is linked and arranged to the gate electrode 7 from the opposite side of the single crystal semiconductor layer in the partial region.
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