| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon carbide semiconductor device having a high carrier mobility and excellent element characteristics and a manufacturing method therefor, by utilizing a flat part between bunching steps produced during high- temperature annealing as the channel part of a field-effect transistor such as a MOSFET. SOLUTION: This silicon carbide semiconductor device utilizes a flat part 9 between bunching steps 8 produced during high-temperature annealing as the channel part of a field-effect transistor such as a MOSFET. Further, the device has a structure such that carriers move through the channel in such a direction as not to cross the bunching steps, and is provided with a silicon carbide plate having a surface of cubic and uneven structure which is intently prepared to control step bunching locations. Such surface portion of the silicon carbide plate is removed by etching after the annealing.
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