| 摘要 |
PROBLEM TO BE SOLVED: To increase circuit scale by reducing the number of constitution elements of a memory cell, and to perform write-in by applying power source voltage in which voltage drop is not caused as it is, with respect to a shadow RAM using a ferroelectric capacitor. SOLUTION: Ferroelectric substances F0, F1 are connected directly to each of storage nodes M0, M1 of an ordinary SRAM cell constituted of six transistors. Thereby, two transistors per one cell can be reduced. Increasing capacity can be performed in the extent of a conventional SRAM. Also, as voltage drop by a transistor is not caused, power source voltage is applied to a ferroelectric capacitor as it is and write-in can be performed. |
