| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor laser element for generating lights with two wavelength by one chip by a few number of times of crystal growth by operating the positioning of two light emission regions by self-alignment. SOLUTION: A first semiconductor laminated structure having the embedded structure of ridges 8 and 9 is formed on an active layer 5 interposed between a pair of clad layers 4 and 6 on a substrate 1, and a second semiconductor laminated structure having an active layer 12 interposed between a pair of clad layers 11 and 13 is formed on this. The active layer 12 is allowed to grow with a part whose refractivity is high while the shape of the ridge is reflected.
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