| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent chippings, when a wafer is divided. SOLUTION: Trenches 22, which are deeper than the thickness of chips when the chips are completed and have curved surfaces in the bottom parts are formed from a forming surface 21' side of semiconductor elements, along dicing lines or chip dividing lines of a wafer 21, on which the semiconductor elements are formed. After a sheet for holding is stuck on forming surfaces of the semiconductor elements on the wafer, the backside of the wafer is ground and polished, and separation into individual chips is performed. After the wafer is divided into individual chips through grinding and polishing, the grinding and polishing are continued, and the thickness of the completed chips is obtained. In this case, a ratio A/B is at least 0.3, where A is the amount of grinding and polishing from the time, when the ground and polished surface of the wafer reaches the bottoms of the trenches to the time, when the thickness of the completed chips is obtained, and B is the depth of regions having the curved surfaces in the bottom parts of the trenches.</p> |
