| 摘要 |
PROBLEM TO BE SOLVED: To provide a desired resistance value and to prevent shorting between electrodes, by providing a surface protection layer protecting the surface of a groove formed at the peripheral part of a first conductivity type semiconductor substrate and outer connection electrodes on both surfaces of the semiconductor substrate. SOLUTION: Grooves 12 are formed on a peripheral part on one surface in an N-type semiconductor substrate 2, the surface protection members of glass are put in the grooves 12 and surface protection layers 14 are formed. The specific resistance of the semiconductor substrate 2 is larger than that of metal or it can be controlled by impurity concentration and desired specific resistance can be obtained. For making resistance to be low in a similar way as winding-type resistance, the thickness of the semiconductor substrate 2 is thinned and the area of a first electrode 8 is enlarged. Since the semiconductor substrate 2 is thin, the inductance of a semiconductor becomes small. Thus, resistance of small inductance is obtained by enlarging the area of the electrode 8. The low resistance of semiconductor resistance is formed by the vertical semiconductor, the electrodes 8 and 10 are arranged on both surfaces of the semiconductor substrate 2, and a part between both electrodes is prevented from being shorted.
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