MANUFACTURE OF SEMICONDUCTOR AND MANUFACTURING APPARATUS OF SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor for smoothly operating film quality control on a boundary face between a silicon substrate and an SiN film, and for forming the SiN film with high quality in a short time. SOLUTION: A wafer made of silicon as main components is irradiated with microwaves via a planar antenna member RLSA 60, having plural slits under a treating gas atmosphere so that plasma containing oxygen, or nitride, or oxygen and nitride can be formed, and oxidation, or nitriding, or oxidation/ nitriding is carried out directly to the surface of the wafer by using this plasma, and an insulating film 21 which is 1 nm or less in film thickness converted equivalent to film thickness of an oxide film.