| 摘要 |
PROBLEM TO BE SOLVED: To shorten a wavelength while high light emitting efficiency and the optical characteristic of a light absorbing coefficient are maintained in an optical semiconductor device having quantum well structure using a nitride III-V compound semiconductor. SOLUTION: In LED having quantum well structure using a nitride III-V compound semiconductor, a barrier layer and a quantum well layer contain Al as an AlGaN multiplex quantum well layer 5 and the Al composition of the barrier layer is made to be larger than that of the quantum well layer. Thus, the operation efficiency of an optical semiconductor element using nitride III-V compound in a short wavelength, light emitting efficiency in the case of LED, for example, can be improved. |
