| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric transducer element excellent in photoelectric transducer efficiency and durability. SOLUTION: A photoelectric transducer element comprises a conductive supporter, a semiconductor containing layer for absorbing a pigment applied to the conductive supporter, an electric charge transporting layer and a counter electrode, wherein the element is increased in sensitivity to a pigment. A pigment absorbing amount of the pigment absorbing semiconductor containing layer is 1×10-4 mol or more per 1 m2 of a projection plane of the semiconductor containing layer, and the surface resistance of the counter electrode is 0.5 Ω/(square) or less. |
