| 摘要 |
PROBLEM TO BE SOLVED: To increase precision of a line width of a circuit pattern after being developed, or to be hard to fluctuate the line width of the circuit pattern after being developed even if a film thickness of a resist film fluctuates, by a method wherein the line width having few fluctuations of the line width for the fluctuation of the resist film thickness is selected out of the line widths in a specified region, and the resist film is formed so as to form the film thickness in response to the line width. SOLUTION: When a region A is specified as a line width of a circuit pattern, a maximum point in this specified region is A1 point, and a minimum point is A2 point. Accordingly, preferably, the line widths of the A1 point or its proximity, or the A2 point or its proximity are selected, and a resist film is formed at a resist film thickness in response to the selected line width. Assuming that a value of the maximum A1 point is selected as the line width of the circuit pattern, the film thickness of the resist film relatively greatly fluctuates. However, the line width of the circuit pattern correspondingly fluctuates in the extremely narrow range α near the maximum A1 point, and the fluctuations of the line width are extremely low restricted. |
