| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electron beam diffraction device capable of discriminating a thin film structure of 100μm×100μm or less synthesized in parallel. SOLUTION: In this device 10, an electron beam source 11 is a field emission type emitter, and a final iris 15 is arranged between an objective iris 13 and a substrate 18. A region from the electron beam source 11 to the objective iris 13 is kept in high vacuum by a first casing 21, and a region from the objective iris 13 to the final iris 15 is kept in medium vacuum, and an alignment electrode 14 is arranged between the objective iris 13 and the final iris 15, and an astigmatism correcting electrode 16 is arranged between the final iris 15 and the substrate 18, and a scanning deflecting electrode 17 is arranged between the final iris 15 and the substrate 18, respectively. This device is composed so as to have a distance of 50 mm or less from the substrate 18 to a screen 19.</p> |
