| 摘要 |
PROBLEM TO BE SOLVED: To form a sidewall by surely protecting the sidewall of a wiring film by a sidewall oxide film, and to prevent the deterioration of electrical characteristics by forming the sidewall having etching characteristics different from those of an isolation insulating film and the sidewall oxide film. SOLUTION: An isolation oxide film 21 is formed in a desired region on a semiconductor substrate 20. A patterned gate electrode 23 and a hard mask 24 are formed onto the semiconductor substrate 20 in a region enclosed by the isolation oxide film 21. Sidewall oxide films 25 are formed on the sidewalls of the gate electrode 23 by thermal oxidation. A sidewall 38 is formed directly on the sidewalls of the hard mask 24 and the sidewalls of the gate electrode 23 through the sidewall oxide films 25. The etching characteristics of the sidewall 38 differ from those of the isolation oxide film 21 and the sidewall oxide films 25. Thus, the sidewall 38 can be shaped without the dropping-in of the isolation oxide film 21, and the deterioration of the electrical characteristics of the semiconductor device can be prevented.
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